elektronische bauelemente ssd10n20-400d n-ch enhancement mode power mosfet 9.2a, 200v, r ds(on) 400m 14-nov-2013 rev.b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe dpak saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 9.2 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) i s 45 a total power dissipation t c =25c p d 50 w operating junction and st orage temperature range t j , t stg -55~175 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3 c / w note: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature millimete r millimete r ref. min. max. ref. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
elektronische bauelemente ssd10n20-400d n-ch enhancement mode power mosfet 9.2a, 200v, r ds(on) 400m 14-nov-2013 rev.b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - 3.5 v v ds = v gs, i d = 250 a gate-body leakage i gss - - 10 a v ds = 0v, v gs = 20v - - 1 v ds = 160v, v gs = 0v zero gate voltage drain current i dss - - 25 a v ds = 160v, v gs = 0v, t j =55c on-state drain current 1 i d(on) 34 - - a v ds = 5v, v gs = 10v - - 400 v gs = 10v, i d = 4a drain-source on-resistance 1 r ds(on) - - 450 m ? v gs = 5.5v, i d = 3.5a forward transconductance 1 g fs - 10 - s v ds =15v, i d =4 a diode forward voltage v sd - 0.95 - v i s =23a, v gs = 0 v dynamic 2 input capacitance c iss - 807 - output capacitance c oss - 81 - reverse transfer capacitance c rss - 38 - pf v gs =0 v ds =15v f =1.0mhz total gate charge q g - 9.1 - gate-source charge q gs - 3.8 - gate-drain charge q gd - 3.8 - nc v ds = 100v v gs = 5.5 v i d = 4a turn-on delay time t d(on) - 3.7 - rise time t r - 7.7 - turn-off delay time t d(off) - 26.3 - fall time t f - 12.4 - ns v dd = 100 v i d = 4a v gen = 10 v r l = 5 ?? r gen = 6 ?? notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
elektronische bauelemente ssd10n20-400d n-ch enhancement mode power mosfet 9.2a, 200v, r ds(on) 400m 14-nov-2013 rev.b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente ssd10n20-400d n-ch enhancement mode power mosfet 9.2a, 200v, r ds(on) 400m 14-nov-2013 rev.b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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